PHT.301 Physics of Semiconductor Devices
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Outline
Introduction
Electrons in crystals
Intrinsic Semiconductors
Extrinsic Semiconductors
Transport
pn junctions
Contacts
JFETs/MESFETs
MOSFETs
Bipolar transistors
Opto-electronics
Lectures
Books
Exam questions
Html basics
TUG students
Before the lectures the slides will be available at: https://cloud.tugraz.at/index.php/s/5P2peA8JfFW6Kr5 The lectures will be recorded via TUbe
October 7, 2026 - Introduction - slides (pdf)
► The lecture stopped this point. Below you can get the material from last year.
Boltzmann approximation Intrinsic semiconductors with a split-off band
Determining Ef from the charge neutrality condition Fermi energy and carrier concentrations of extrinsic semiconductors
Electron and hole mobility of silicon Electrical conductivity of silicon Drift and Diffusion simulation The Einstein relation Haynes-Shockley Experiment
Built-in Voltage Abrupt pn junctions in the depletion approximation A linearly graded pn junction in the depletion approximation One-dimensional Poisson solver Varactor Long/short diodes Long diodes Short diodes PN diode IV characteristics PN diode Current-Temperature Characteristics PN diode Voltage-Temperature Characteristics Zener diodes Tunnel diodes / Esaki diodes x-ray image of a diode
Metal / n-semiconductor Schottky contact in the depletion approximation Metal / p-semiconductor Schottky contact in the depletion approximation Schottky diode IV characteristics Thermionic-emission current in a Schottky diode
JFET Gradual Channel Approximation MESFET Gradual Channel Approximation Transistor characteristics of a n-channel JFET Transistor characteristics of a p-channel JFET Transistor characteristics of a n-channel MESFET
MOS Capacitor - Depletion approximation MOS Capacitor - Solving the Poisson Equation MOS Capacitor - Capacitance voltage MOSFET Gradual Channel Approximation Transistor characteristics of a n-channel MOSFET Transistor characteristics of a p-channel MOSFET High frequency response of MOSFETs Subthreshold current
Ebers - Moll - Model : Common base configuration Common emitter configuration Minority carrier concentration of an npn bipolar transistor NPN common base configuration NPN common emitter configuration (including the Early effect) IGBT - Insulated Gate Bipolar Transistor Latch-Up
Light emitting diode Quantum cascade laser Solar cell