PHT.301 Physics of Semiconductor Devices

NPN common base configuration

This page calculates the collector current for an npn bipolar transistor in a common base configuration. Traces are plotted for five equally spaced emitter currents \(I_{e\text{ max}}*[0.2,0.4,0.6,0.8,1]\). The details of the calculation are described in the discussion of the minority carrier concentration of an npn bipolar transistor.

\(E_g=\) eV; \(n_i=\) cm^-3; \(V_{bi1}=\)  eV; \(V_{bi2}=\)  eV; \(W_1=\)  μm; \(W_2=\)  μm;
\(D_{pe}=\) cm²/s; \(D_{nb}=\) cm²/s; \(D_{pc}=\) cm²/s; \(L_{pe}=\)  μm; \(L_{nb}=\)  μm; \(L_{pc}=\)  μm;