In this section we define the Single-Electron-Transistor-Network that we want to analyse.  Currently, only networks with up to 10 islands, with up to 17 grounded voltage sources, and without capacitively completely isolated sub parts can be treated.

We have to specify

for our network. Then we can calculate the tunnel probabilities for a

Let there be c = charge nodes and v = voltage sources in a network with grounded voltage sources and without capacitively completely isolated sub parts,

then the network geometry is completely detemined by the capacitances between the island themselves, the capacitances between the islands and ground, and the capacitances between the islands and the voltage sources, as well as by the corresponding resistances, which can be infinite, in which case we deal with a pure capacitor, or finite, in which case we deal with a tunnel junction.

Additionally we have to specify the offset charges of the islands, in order to completely characterise our network:

Now, our network can be in a specific state,

it can be subject to different boundary conditions which are given by the voltage sources,

and it can be operated at a specific Temperature.
T e m p e r a t u r e
[Kelvin]