513.001 Molecular and Solid State Physics | |
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Maximum field strengthA silicon p-n diode has a doping of Nd = 400000000000000000 cm-3 and Na = 20000000000000000 cm-3. At 300 K the built-in potential is Vbi = 0.80624620267356 V, the depletion width on the n-side is Wn = 1.123300489747E-8 m, and the depletion width on the p-side is Wp = 2.246600979494E-7 m. The relative dielectric constant of silicon is εr = 11.9. |