Electron density of states for hexagonal silicon carbide (SiC)

The density of states for silicon carbide was calculated using the program Quantum Espresso (version 5.3.0).

D(E) [unitcell^-1 eV^-1]
	Energy [eV]

We used the following parameters from ICSD with the reference number: 15325 (Solid State Communications (1977) 23, (*) p815-p819): parameters for SiC
The geometry for The conversion to quantum-espresso files took place in cif2cell: cif2cell
Input files:

sic-dos-dos.in
sic-dos-input.in
sic-dos-nscf.in

Output files:
SiC.zip

E [eV] D(E) [unitcell^-1eV^-1]