The electron bandstructure for indium arsenide (zincblende structure) was calculated using the program Quantum Espresso (version 5.3.0). InAs is a compound semiconductor material with a direct bandgap of 0.35 eV. The calculated bandgap was too small, so the bands above the valence band were shifted to get the right gap. The course of the calculated bands correlates to comparative bandstructures for InAs (cf. MaterialsDesign) .
