Physics of Semiconductor Devices

Return to
problem list

      

Sze problem 7.4

The capacitance of a Au-n-type GaAs Schottky barrier diode is given by the relation 1/C² = 288000 - 288000V where C is expressed in μF and V is expressed in volts. Taking the area to be 10-1 cm², calculate the built-in potential, the barrier height, the depletion layer width, and the maximum field at zero bias.