Physics of Semiconductor Devices

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Sze problem 4.1

Determine the n-type doping concentration to meet the following specifications for a Si p-n junction:

NA = 300000000000000000 cm-3, Emax = 400000 V/cm, Reverse bias voltage VR = 24 V, and T = 300 K.

Hint: The formula for the depletion width contains a factor Vbi + VR. Since VR >> Vbi, neglect Vbi.