Physics of Semiconductor Devices

Temperature dependent conductivity of silicon

Draw the temperature dependence of the density of holes in the valence band for silicon doped with boron at 10¹⁷ 1/cm³.

A doped semiconductor makes a transition from extrinsic behavior to intrinsic behavior when density of thermally activated charge carriers equals the density of dopants. What is this temperature for the boron doped silicon. Indicate this temperature in your drawing.

For silicon: E_g = 1.12 eV, N_c = 2.78 × 10²⁵ 1/m³, and N_v = 9.84 × 10²⁴ 1/m³.