Physics of Semiconductor Devices

Temperature dependent conductivity

A doped semiconductor makes a transition from extrinsic behavior to intrinsic behavior when number of thermally activated charge carriers equals the number of dopants. What is this temperature for silicon doped with boron at 8000000000000000 cm^-3?

E_g is slightly temperature dependent but use E_g = 1.12 eV, N_c = 2.78 × 10²⁵ m^-3 and N_v = 9.84 × 10²⁴ m^-3 to estimate the transition temperature.