513.001 Molecular and Solid State Physics | |
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Maximum field strengthA silicon p-n diode has a doping of Nd = 300000000000000000 cm-3 and Na = 4000000000000000 cm-3. At 300 K the built-in potential is Vbi = 0.75722562635708 V, the depletion width on the n-side is Wn = 6.6076492000174E-9 m, and the depletion width on the p-side is Wp = 4.9557369000131E-7 m. The relative dielectric constant of silicon is εr = 11.9. |