513.001 Molecular and Solid State Physics | |
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Carriers in a doped semiconductorSilicon is doped n-type at 2.0E+19 cm-3 and p-type at 3000000000000000 cm-3. Assuming that all of the dopants are ionized, what is the density of electrons in the conduction band and the density of holes in the valence band? For silicon, ni = 1.5 × 1010 cm-3 at 300 K. |